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V916765G24QAFW-D3

Description
DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200
Categorystorage    storage   
File Size125KB,17 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance  
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V916765G24QAFW-D3 Overview

DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200

V916765G24QAFW-D3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIMM
package instructionDIMM, DIMM200,24
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)267 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N200
JESD-609 codee4
memory density8589934592 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM200,24
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.08 A
Maximum slew rate2.16 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch0.6 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

V916765G24QAFW-D3 Related Products

V916765G24QAFW-D3 702021580000.02LF V916765G24QAFW-F5
Description DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200 Fixed Resistor, Wire Wound, 0.5W, 158000ohm, 300V, 0.02% +/-Tol, -2,2ppm/Cel, DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-200
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Number of terminals 200 2 200
Maximum operating temperature 85 °C 145 °C 85 °C
Package shape RECTANGULAR TUBULAR PACKAGE RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY Axial MICROELECTRONIC ASSEMBLY
technology CMOS WIRE WOUND CMOS
Is it lead-free? Lead free - Lead free
Parts packaging code DIMM - DIMM
package instruction DIMM, DIMM200,24 - DIMM, DIMM200,24
Contacts 200 - 200
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST
Maximum access time 0.6 ns - 0.45 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 267 MHz - 267 MHz
I/O type COMMON - COMMON
JESD-30 code R-XDMA-N200 - R-XDMA-N200
JESD-609 code e4 - e4
memory density 8589934592 bit - 8589934592 bit
Memory IC Type DDR DRAM MODULE - DDR DRAM MODULE
memory width 64 - 64
Number of functions 1 - 1
Number of ports 1 - 1
word count 134217728 words - 134217728 words
character code 128000000 - 128000000
Operating mode SYNCHRONOUS - SYNCHRONOUS
organize 128MX64 - 128MX64
Output characteristics 3-STATE - 3-STATE
Package body material UNSPECIFIED - UNSPECIFIED
encapsulated code DIMM - DIMM
Encapsulate equivalent code DIMM200,24 - DIMM200,24
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
power supply 1.8 V - 1.8 V
Certification status Not Qualified - Not Qualified
refresh cycle 8192 - 8192
self refresh YES - YES
Maximum standby current 0.08 A - 0.08 A
Maximum slew rate 2.16 mA - 2.72 mA
Maximum supply voltage (Vsup) 1.9 V - 1.9 V
Minimum supply voltage (Vsup) 1.7 V - 1.7 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V
surface mount NO - NO
Temperature level OTHER - OTHER
Terminal surface Gold (Au) - Gold (Au)
Terminal form NO LEAD - NO LEAD
Terminal pitch 0.6 mm - 0.6 mm
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Base Number Matches 1 - 1

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