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SMBB780-1100-02

Description
1 ELEMENT, INFRARED LED, 780nm, ROHS COMPLIANT PACKAGE-2
CategoryLED optoelectronic/LED    photoelectric   
File Size194KB,6 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Environmental Compliance
Download Datasheet Parametric View All

SMBB780-1100-02 Overview

1 ELEMENT, INFRARED LED, 780nm, ROHS COMPLIANT PACKAGE-2

SMBB780-1100-02 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.8 A
Maximum forward voltage2.5 V
Installation featuresSURFACE MOUNT
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesINFRARED LED
Nominal output power330 mW
peak wavelength780 nm
Maximum reverse voltage5 V
Semiconductor materialAlGaAs
shapeRECTANGULAR
Spectral bandwidth2.8e-8 m
surface mountYES
perspective20 deg
Base Number Matches1
epitex

Opto-Device & Custom LED
High Power Top LED SMBB780-1100-02
Lead ( Pb ) Free Product – RoHS Compliant
PRELIMINARY
SMBB780-1100-02 is an AlGaAs LED mounted on copper heat sink with a
5*5
mm package
These devices are available to be operated and 1500mW/sr at IFP=2A.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2)
Package Resin
(3)
Lens
SMBB780-1100-02
High Power Top LED
SMBB780-1100-02
AlGaAs
1000um*1000um
1pce
780nm typ.
Silver Plated on Copper
PPA Resin
Silicone Resin
High Power Top LED
Outer
dimension (Unit: mm)
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
2000
800
2000
5
10
100
-40 ~ +85
-40 ~ +85
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition
V
F
I
F
=800mA
Forward Voltage
V
FP
I
FP
=2A
I
F
=800mA
Radiated Power
P
O
I
FP
=2A
I
F
=800mA
Radiant Intensity
I
E
I
FP
=2A
Peak Wavelength
P
I
F
=800mA
Half Width

I
F
=800mA
Viewing Half Angle


I
F
=100mA
Rise Time
tr
I
F
=800mA
Fall Time
tf
I
F
=800mA
Minimum
770
Typical
2.0
3.2
300
750
600
1500
780
28
±10
50
50
Maximum
2.5
790
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
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