UZXM62P03E6TA datasheet, PDF - EEWORLD Datasheet

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UZXM62P03E6TA: DescriptionSmall Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size283KB，7 Pages; ManufacturerDiodes Incorporated

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UZXM62P03E6TA Overview

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

UZXM62P03E6TA Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	1.5 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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ZXM62P03E6

30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

=-30V; R

DS(ON)

=0.15

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

=-2.6A

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23-6 package

SOT23-6

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE

ZXM62P03E6TA

ZXM62P03E6TC

REEL SIZE

(inches)

TAPE WIDTH

(mm)

8 embossed

QUANTITY

PER REEL

3,000

10,000

Pinout

DEVICE MARKING

2P03

Top view

ISSUE 1 - OCTOBER 2005

SEMICONDUCTORS

UZXM62P03E6TA Related Products

	UZXM62P03E6TA	UZXM62P03E6TC
Description	Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN	Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
Parts packaging code	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW THRESHOLD	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (ID)	1.5 A	1.5 A
Maximum drain-source on-resistance	0.15 Ω	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	6	6
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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