PHOTOTRANSISTOR
Part Number: WP3DP3C
Features
MECHANICALLY AND SPECTRALLY MATCHED TO THE
Description
Made with NPN silicon phototansistor chips.
INFRARED EMITTING LED LAMP.
WATER CLEAR LENS.
RoHS COMPLIANT.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
SPEC NO: DSAF7918
APPROVED: WYNEC
REV NO: V.2
CHECKED: Allen Liu
DATE: SEP/10/2007
DRAWN: W.J.Hua
PAGE: 1 OF 3
ERP: 1101003912
Electrical / Optical Characteristics at TA=25°C
Symbol
V
BR CEO
V
BR ECO
V
CE (SAT)
I
CEO
T
R
T
F
I
(ON)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Collector Dark Current
Rise Time (10% to 90%
)
Fall Time (90% to 10%
)
On State Collector Current
0.3
15
15
0.8
Min.
30
5
0.8
100
Typ.
Max.
Units
V
V
V
nA
us
us
mA
Test Conditions
I
C
=100uA
Ee=0mW/c
㎡
I
E
=100uA
Ee=0mW/c
㎡
I
C
=2mA
Ee=20mW/c
㎡
V
CE
=10V
Ee=0mW/c
㎡
V
CE
= 5V
I
C
=1mA
R
L
=1000Ω
V
CE
= 5V
Ee=1mW/c
㎡
λ=940nm
Absolute Maximum Ratings at TA=25°C
Parameter
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature
Storage Temperature
Lead Soldering Temperature (>5mm for 5sec)
Max.Ratings
30V
5V
100mW
-40°C To +85°C
-40°C To +85°C
260°C
SPEC NO: DSAF7918
APPROVED: WYNEC
REV NO: V.2
CHECKED: Allen Liu
DATE: SEP/10/2007
DRAWN: W.J.Hua
PAGE: 2 OF 3
ERP: 1101003912