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GBLA10D2G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size209KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GBLA10D2G Overview

Bridge Rectifier Diode,

GBLA10D2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current120 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GBLA005 thru GBLA10
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical IR less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Single Phase Bridge Rectifiers
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
2.0 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
C
=50℃
@T
A
=40℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated VR
Typical junction capabitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
GBLA GBLA GBLA GBLA GBLA GBLA GBLA
005
50
35
50
01
100
70
100
02
200
140
200
04
400
280
400
4
3
120
59
1.0
5
500
95
10
47
- 55 to +150
- 55 to +150
40
O
06
600
420
600
08
800
560
800
10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
t
V
F
I
R
Cj
R
θjL
R
θjA
T
J
T
STG
A
A
2
s
V
μA
pF
C/W
O
O
C
C
Document Number: DS_D1408055
Version: C14

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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