SP8K64
Transistors
4V Drive Nch+Nch MOSFET
SP8K64
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
SP8K64
Code
Basic ordering unit (pieces)
Taping
TB
2500
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Absolute maximum ratings
(Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw 10µs, Duty cycle 1%
∗2
Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
Tch
Tstg
∗2
Limits
30
±20
±9
±36
1.6
36
2.0
1.4
150
−55
to
+150
Unit
V
V
A
A
A
A
W/TOTAL
W/ELEMENT
°C
°C
1/4
SP8K64
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
100
100
Ta=25°C
Pulsed
1000
V
GS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
DRAIN CURRENT : I
D
(A)
10
100
1
0.1
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10V
10
0.01
0.001
1.0
1.5
2.0
2.5
3.0
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(
I
)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
I
D
=9A
I
D
=4.5A
Ta=25°C
Pulsed
100
100
10
10
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι )
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
FORWARD TRANSFER ADMITTANCE :
Yfs (S)
100
V
DS
=10V
Pulsed
Ta=
−25°C
Ta=25°C
Ta=75°C
Ta=125°C
10000
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
1000
10
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
t
f
100
C
iss
1000
t
d (off)
t
d (on)
1
10
t
r
1
0.01
0.1
0.01
0.1
1
10
100
100
0.01
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
Fig.7 Forward Transfer
Admittance vs.
Drain Current
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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of reliability and the malfunction of which would directly endanger human life (such as medical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0