IDT71V65603S100BQ datasheet, PDF

IDT71V65603S100BQ: DescriptionZBT SRAM, 256KX36, 5ns, CMOS, PBGA165, FBGA-165; Categorystorage storage; File Size494KB，26 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71V65603S100BQ Overview

ZBT SRAM, 256KX36, 5ns, CMOS, PBGA165, FBGA-165

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	TBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	5 ns
Other features	BURST COUNTER
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
length	15 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.04 A
Minimum standby current	3.14 V
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	13 mm
Base Number Matches	1

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