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AH237-83

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 4.12pF C(T), 22V, Gallium Arsenide, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size179KB,4 Pages
Manufacturere2v technologies
Download Datasheet Parametric View All

AH237-83 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 4.12pF C(T), 22V, Gallium Arsenide, Hyperabrupt

AH237-83 Parametric

Parameter NameAttribute value
package instructionO-XEMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Nominal diode capacitance4.12 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2000
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
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