PD - 94983
IRF9Z34NPbF
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
l
Lead-Free
Description
l
HEXFET
®
Power MOSFET
D
V
DSS
= -55V
R
DS(on)
= 0.10Ω
G
S
I
D
= -19A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-19
-14
-68
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
0.50
Max.
2.2
62
Units
°C/W
02/05/04
IRF9Z34NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
-2.0
4.2
Typ.
-0.05
13
55
30
41
4.5
7.5
620
280
140
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
0.10
Ω
V
GS
= -10V, I
D
= -10A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= 25V, I
D
= -10A
-25
V
DS
= -55V, V
GS
= 0V
µA
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
35
I
D
= -10A
7.9
nC V
DS
= -44V
16
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -28V
I
D
= -10A
ns
R
G
= 13Ω
R
D
= 2.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= -25V
= 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-19
showing the
A
G
integral reverse
-68
p-n junction diode.
S
-1.6
V
T
J
= 25°C, I
S
= -10A, V
GS
= 0V
54
82
ns
T
J
= 25°C, I
F
= -10A
110 160
nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 3.6mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
-10A, di/dt
≤
-290A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
R
G
= 25Ω, I
AS
= -10A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
IRF9Z34NPbF
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
10
-4.5V
20µs PULSE WIDTH
T
C
= 175°C
1
10
-4.5V
1
0.1
1
20µs PULSE WIDTH
Tc = 25°C
A
10
100
1
0.1
100
A
-VDS , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -17A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 25°C
T
J
= 175°C
10
1.0
0.5
1
4
5
6
7
V
DS
= -25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= -10V
80 100 120 140 160 180
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF9Z34NPbF
1200
-V
GS
, Gate-to-Source Voltage (V)
1000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -10A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
800
C
iss
C
oss
12
600
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
100
10µs
T
J
= 175°C
T
J
= 25°C
1
100µs
10
1ms
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
A
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF9Z34NPbF
20
V
DS
V
GS
R
D
I
D
, Drain Current (A)
-10V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
10%
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
+
-
15
R
G
D.U.T.
V
DD
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