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S250

Description
0.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size111KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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S250 Overview

0.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
BRIDGE RECTIFIERS
CURRENT:
TO - 269AA
.206 (
5.21
)
.195 (
4.95
)
.154 (
3.93
)
.135 (
344
)
S40 - - - S500
VOLTAGE RANGE
: 80 -- 1000 V
GLASS PASSIVATED SILICON
0.8 A
Rating to 1000 V
Low forward voltage drop
Small size,plastic case
Glass passivated junction
Weight: 0.0078 ounces, 0.22grams
.105 (
2.67)
.095 (
2.41
)
.029 (
0.74
)
.017 (
0.43
)
.075 (.
19)
.065 (.16)
.280 (
7.13
)
.232 (
5.91
)
.018
(
0.41)
.034 (
0.96)
.019 (0.48)
.195 (4.95)
.170 (4.55)
.106 (
2.70)
.090 (2.30)
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
inch(mm)
S40
Maximum alternating input voltage
Repetitive peak reverse voltage
Maximum average forward
rectified output current
Peak forward surge current
8.3ms single half-sine-wave
Maximum forwand voltage drop
per element at 0.4 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage
per element
@T
A
=100
Thermal resistance junction to ambient air
Operating temperature range
Storage temperature range
@Tc= 50
V
VRMS
V
RRM
I
(AV)
I
FSM
V
F
I
R
50
80
S80
110
160
S125 S250 S380 S500
UNITS
170
250
0.8
40
1.2
10.0
1.0
420
600
560
800
700
1000
V
V
A
A
V
A
mA
K/W
R
θJA
T
j
T
STG
60
- 55 --- + 150
- 55 --- + 150
www.galaxycn.com
Document Number 0287150
BL
GALAXY ELECTRICAL
1.

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