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RU3B

Description
1.1 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RU3B Overview

1.1 A, SILICON, RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
RU3YX(Z) --- RU3C(Z)
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 1.1 - 2.0 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15B
MECHANICAL DATA
Case: JEDEC DO-15B, molded plastic
Terminals: Axial leads,solderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.024 ounces, 0.68 grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU3YX
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to ambient.
RU3
400
280
400
1.5
RU3A
600
420
600
RU3B
800
560
800
1.1
RU3C
1000
700
1000
1.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
2.0
@T
A
=75
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
50.0
20.0
A
0.95
1.5
10.0
2.5
V
A
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
300.0
50
50
12
400.0
100
30
ns
pF
/W
- 55 ----- + 150
- 55 ----- + 150
www.galaxycn.com
Document Number 0262045
BL
GALAXY ELECTRICAL
1
.

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