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RGP10G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size54KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RGP10G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL

RGP10G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.1500 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1 A
BL
FEATURES
Low cost
GALAXY ELECTRICAL
RGP10A(Z) - - - RGP10M(Z)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIER
DO - 41
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RGP
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
RGP
10B
100
70
100
RGP
10D
200
140
200
RGP
10G
400
280
400
1.0
RGP
10J
600
420
600
RGP
10K
800
560
800
RGP
10M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
10.0
200.0
250
15
50
- 55---- + 150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261009
BL
GALAXY ELECTRICAL
1.

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RGP10G RGP10B RGP10A RGP10D RGP10J RGP10K RGP10M
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL
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