Bulletin I25174 rev. B 04/00
ST223C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
390A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST223C..C
390
55
745
25
5850
6130
171
156
400 to 800
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
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1
ST223C..C Series
Bulletin I25174 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST223C..C
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
930
910
780
490
50
V
DRM
50
40
I
TM
180
o
el
800
770
650
400
50
50
55
1430
1490
1430
1070
50
V
DRM
-
40
I
TM
100µs
1220
1300
1260
920
50
-
55
5870
3120
1880
1000
50
V
DRM
-
40
I
TM
Units
5240
2740
1640
860
50
-
55
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST223C..C
390 (150)
55 (85)
745
5850
6130
4920
5150
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
171
156
121
110
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
1710
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST223C..C Series
Bulletin I25174 rev. B 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST223C..C Units
1.58
1.05
1.09
0.88
mΩ
0.82
600
1000
mA
V
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST223C..C
1000
0.78
Min
10
Max
30
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
Max. turn-off time
µs
t
q
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST223C..C
500
40
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST223C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST223C..C Series
Bulletin I25174 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST223C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
0.015
0.019
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
22
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
dv/dt - t
q
combinations available
20
CN
CM
CL
CP
CK
--
--
50
DN
DM
DL
DP
DK
--
--
100
EN
EM
EL
EP
EK
--
--
200
FN *
FM
FL *
FP
FK
--
--
400
--
--
HL
HP
HK
HJ
HH
dv/dt (V/µs)
10
8
- t
q
code
12
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
15
t
q
(µs)
18
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
20
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
25
30
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
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ST223C..C Series
Bulletin I25174 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (°C )
130
120
110
100
90
80
70
60
50
40
30
0
50
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
0
30 °
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
thJ- hs
(D C ) = 0 .1 7 K / W
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
t hJ- hs
(D C ) = 0 .1 7 K / W
C o nd uc tio n A ng le
C o ndu ctio n Pe rio d
30°
6 0°
60°
90°
1 20°
180 °
DC
90°
120°
180 °
2 50
3 00
100
150
20 0
50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0
A v e ra g e O n -s ta t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
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