MT5C1008CW-35E/883C datasheet, PDF

MT5C1008CW-35E/883C: DescriptionStandard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32; Categorystorage storage; File Size246KB，17 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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MT5C1008CW-35E/883C Overview

Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	35 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
length	40.64 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	4.3434 mm
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm
Base Number Matches	1

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