GS81302Q19E-250T datasheet, PDF

GS81302Q19E-250T: DescriptionQDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, FPBGA-165; Categorystorage storage; File Size370KB，28 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS81302Q19E-250T Overview

QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, FPBGA-165

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	150994944 bit
Memory IC Type	QDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm
Base Number Matches	1

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