M28F201-70N1R datasheet, PDF - EEWORLD Datasheet

M28F201-70N1R: Description2 Mb 256K x 8, Chip Erase FLASH MEMORY; Categorystorage storage; File Size145KB，21 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M28F201-70N1R Overview

2 Mb 256K x 8, Chip Erase FLASH MEMORY

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	8 X 20 MM, PLASTIC, REVERSE, TSOP-32
Contacts	32
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	70 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	2097152 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	8 mm

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