M366S1654CTS-L1H datasheet, PDF

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M366S1654CTS-L1H: Description16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD; Categorystorage storage; File Size108KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M366S1654CTS-L1H Overview

16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

M366S1654CTS-L1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	compli
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.76 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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M366S1654CTS

M366S1654CTS SDRAM DIMM

PC133/PC100 Unbuffered DIMM

16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION

The Samsung M366S1654CTS is a 8M bit x 64 Synchronous

Dynamic RAM high density memory module. The Samsung

M366S1654CTS consists of four CMOS 8M x 16 bit with 4banks

Synchronous DRAMs in TSOP-II 400mil package and a 2K

EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

substrate.Three 0.1uF decoupling capacitors are mounted on

the printed circuit board in parallel for each SDRAM.

The M366S1654CTS is a Dual In-line Memory Module and is

intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of

system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows

the same device to be useful for a variety of high bandwidth,

high performance memory system applications.

FEATURE

• Performance range

Part No.

M366S1654CTS-L7C/C7C

M366S1654CTS-L7A/C7A

M366S1654CTS-L1H/C1H

M366S1654CTS-L1L/C1L

•

Max Freq. (Speed)

133MHz (7.5ns@CL=2)

133MHz (7.5ns@CL=3)

100MHz (6.0ns@CL=2)

100MHz (6.0ns@CL=3)

Burst mode operation

Auto & self refresh capability (8192 Cycles/64ms)

LVTTL compatible inputs and outputs

Single 3.3V

0.3V power supply

MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the

system clock

• Serial presence detect with EEPROM

• PCB :

Height (1,000mil)

, single sided component

PIN CONFIGURATIONS (Front side/back side)

Pin Front Pin

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

*CB0

*CB1

DQM0

Front

Pin Front Pin

Back

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

*CB4

*CB5

CAS

DQM4

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

140

Back

DQM5

*CS1

RAS

BA0

A11

*CLK1

A12

CKE0

*CS3

DQM6

DQM7

*A13

*CB6

*CB7

DQ48

DQ49

141

142

143

144

145

146

147

148

149

150

151

152

153

154

155

156

157

158

159

160

161

162

163

164

165

166

167

168

Back

DQ50

DQ51

DQ52

REF

DQ53

DQ54

DQ55

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

*CLK3

**SA0

**SA1

**SA2

29 DQM1 57 DQ18 85

58 DQ19 86

CS0

60 DQ20 88

62 *V

REF

63 *CKE1 91

65 DQ21 93

38 A10/AP 66 DQ22 94

67 DQ23 95

BA1

69 DQ24 97

42 CLK0 70 DQ25 98

71 DQ26 99

72 DQ27 100

101

CS2

46 DQM2 74 DQ28 102

47 DQM3 75 DQ29 103

76 DQ30 104

77 DQ31 105

106

79 CLK2 107

NC 108

52 *CB2 80

53 *CB3 81 *WP 109

82 **SDA 110

55 DQ16 83 **SCL 111

112

56 DQ17 84

PIN NAMES

Pin Name

A0 ~ A11

BA0 ~ BA1

DQ0 ~ DQ63

CLK0, CLK2

CKE0

CS0, CS2

RAS

CAS

DQM0 ~ 7

REF

SDA

SCL

SA0 ~ 2

*WP

Function

Address input (Multiplexed)

Select bank

Data input/output

Clock input

Clock enable input

Chip select input

Row address strobe

Column address strobe

Write enable

DQM

Power supply (3.3V)

Ground

Power supply for reference

Serial data I/O

Serial clock

Address in EEPROM

Write protection

Don′t use

No connection

* These pins are not used in this module.

These pins should be NC in the system

which does not support SPD.

* SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 0.1 Sept. 2001

M366S1654CTS-L1H Related Products

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Description	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	Bandpass Filter	pushPIN HS ASMBLY,FINE-PITCH,STRAIGHT, HOLE PATTERN:LEFT-TABBED,BLUE,T766	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	Meet ROHS, Green Product.
Is it Rohs certified?	incompatible	-	-	-	incompatible	incompatible	incompatible	incompatible	-
Maker	SAMSUNG	-	-	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-
Parts packaging code	DIMM	-	-	-	DIMM	DIMM	DIMM	DIMM	-
package instruction	DIMM, DIMM168	-	-	-	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	-
Contacts	168	-	-	-	168	168	168	168	-
Reach Compliance Code	compli	-	-	-	compli	compli	compli	compli	-
ECCN code	EAR99	-	-	-	EAR99	EAR99	EAR99	EAR99	-
access mode	SINGLE BANK PAGE BURST	-	-	-	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-
Maximum access time	6 ns	-	-	-	5.4 ns	5.4 ns	6 ns	6 ns	-
Other features	AUTO/SELF REFRESH	-	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	100 MHz	-	-	-	133 MHz	133 MHz	100 MHz	100 MHz	-
I/O type	COMMON	-	-	-	COMMON	COMMON	COMMON	COMMON	-
JESD-30 code	R-XDMA-N168	-	-	-	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	-
memory density	1073741824 bi	-	-	-	1073741824 bi	1073741824 bi	1073741824 bi	1073741824 bi	-
Memory IC Type	SYNCHRONOUS DRAM MODULE	-	-	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-
memory width	64	-	-	-	64	64	64	64	-
Humidity sensitivity level	1	-	-	-	1	1	1	1	-
Number of functions	1	-	-	-	1	1	1	1	-
Number of ports	1	-	-	-	1	1	1	1	-
Number of terminals	168	-	-	-	168	168	168	168	-
word count	16777216 words	-	-	-	16777216 words	16777216 words	16777216 words	16777216 words	-
character code	16000000	-	-	-	16000000	16000000	16000000	16000000	-
Operating mode	SYNCHRONOUS	-	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	70 °C	-	-	-	70 °C	70 °C	70 °C	70 °C	-
organize	16MX64	-	-	-	16MX64	16MX64	16MX64	16MX64	-
Output characteristics	3-STATE	-	-	-	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	-	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	-	-	-	DIMM	DIMM	DIMM	DIMM	-
Encapsulate equivalent code	DIMM168	-	-	-	DIMM168	DIMM168	DIMM168	DIMM168	-
Package shape	RECTANGULAR	-	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	-	-	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
Peak Reflow Temperature (Celsius)	225	-	-	-	225	225	225	225	-
power supply	3.3 V	-	-	-	3.3 V	3.3 V	3.3 V	3.3 V	-
Certification status	Not Qualified	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
refresh cycle	8192	-	-	-	8192	8192	8192	8192	-
self refresh	YES	-	-	-	YES	YES	YES	YES	-
Maximum standby current	0.008 A	-	-	-	0.008 A	0.008 A	0.008 A	0.008 A	-
Maximum slew rate	0.76 mA	-	-	-	0.88 mA	0.8 mA	0.76 mA	0.76 mA	-
Maximum supply voltage (Vsup)	3.6 V	-	-	-	3.6 V	3.6 V	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	-	-	-	3 V	3 V	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	-	-	-	3.3 V	3.3 V	3.3 V	3.3 V	-
surface mount	NO	-	-	-	NO	NO	NO	NO	-
technology	CMOS	-	-	-	CMOS	CMOS	CMOS	CMOS	-
Temperature level	COMMERCIAL	-	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	-	-	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-
Terminal pitch	1.27 mm	-	-	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-
Terminal location	DUAL	-	-	-	DUAL	DUAL	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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