ASI10665 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> ASI10665

Preview

ASI10665: DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size16KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

Download Datasheet Parametric View All

ASI10665 Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN,

ASI10665 Parametric

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-based maximum capacity	80 pF
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

UFT15-28S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI UFT15-28S

is Designed for

B

PACKAGE STYLE .380 4L STUD

.112x45°

A

FEATURES:

•

Omnigold™

Metalization System

ØC

D

H

I

J

#8-32 UNC-2A

G

F

E

MAXIMUM RATINGS

I

C

V

CB

V

CE

P

DISS

T

J

T

STG

θ

JC

10 A

60 V

35 V

140 W @ T

C

= 25 C

-65

O

C to +200

O

C

-65

O

C to +150

O

C

1.5 C/W

O

DIM

A

B

C

D

E

F

G

H

I

J

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

ORDER CODE: ASI10665

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CER

BV

EBO

I

CES

h

FE

C

ob

P

GE

IMD

3

I

C

= 50 mA

I

C

= 50 mA

I

E

= 10 mA

V

E

= 28 V

T

C

= 25 C

O

NONETEST

CONDITIONS

R

BE

= 10

Ω

MINIMUM TYPICAL MAXIMUM

35

60

4.0

5

UNITS

V

mA

---

pF

dB

V

CE

= 5.0 V

V

CB

= 28 V

V

CE

= 25 V

P

REF

= 16 W

I

C

= 1.0 A

f = 1.0 MHz

I

CQ

= 3.2 A

Vision = -8 dB

Side Band = -16 dB

f = 225 MHz

Snd. = -7 dB

10

100

80

13.5

14.5

-55

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

Recommended Resources

variable bandpass amplifier

HT-2844 series (4 tone) circuit

Audio signal detector circuit diagram

Charge mode amplifier circuit diagram

Ventilation motor temperature control circuit

Computer motherboard circuit diagram 815 3_36

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components