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MAAPGM0072-DIE

Description
MAAPGM0072-DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size321KB,8 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MAAPGM0072-DIE Overview

MAAPGM0072-DIE

MAAPGM0072-DIE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction0.124 X 0.079 INCH, 0.003 INCH HEIGHT, HERMETIC SEALED, DIE
Reach Compliance Codeunknown
Base Number Matches1
MAAPGM0072-DIE
Part Status: Preliminary
Rev: B
Amplifier, Power, 1W
17.7—19.7 GHz
Features
1 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG
®
Process
M/A-COM Products
RoHS Compliant
Description
The
MAAPGM0072-DIE
is a 4-stage 1 W power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device
is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple implant
capability enabling power, low-noise, switch and digital FETs on a single
chip, and polyimide scratch protection for ease of use with automated
manufacturing processes. The use of refractory metals and the absence of
platinum in the gate metal formulation prevents hydrogen poisoning when
employed in hermetic packaging.
Primary Applications
Point-to-Point Radios
18 GHz Band
Ordering Information
Description
Part Number
Ceramic Package
MAAPGM0072
PlasticPackage
MAAP-000072-PKG003
Sample Board (Die)
MAAP-000072-SMB003
Mechanical Sample (Die)
MAAP-000072-MCH000
Electrical Characteristics: T
B
= 30°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
= 500mA
2
, P
in
= 12 dBm, R
G
= 200
Ω
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Power Added Efficiency
Input VSWR
Output VSWR
Output Third Order Intercept
Output Third Order Intermod,
P
out
= 25 dBm (DCL)
Gate Current
Drain Current
1
1.
2.
Symbol
f
P
OUT
P1dB
G
PAE
VSWR
VSWR
TOI
IMD3
I
GG
I
DD
Typical
17.7-19.7
30.5
30.5
22
23
1.5:1
1.6:1
38
29
5
590
dBm
dBc
mA
mA
Units
GHz
dBm
dBm
dB
%
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information
contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED:
In full production, samples readily available, standard lead times apply.
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