SPMB50A500 datasheet, PDF - EEWORLD Datasheet

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SPMB50A500: DescriptionPower Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MODULE-7; CategoryDiscrete semiconductor The transistor; File Size152KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SPMB50A500 Overview

Power Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MODULE-7

SPMB50A500 Parametric

Parameter Name	Attribute value
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-PUFM-X7
Contacts	7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	600 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Description	Power Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MODULE-7	Transistor	Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 14A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 20A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA	Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA	Power Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MODULE-8	Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
package instruction	FLANGE MOUNT, R-PUFM-X7	,	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, R-PUFM-X8	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Configuration	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	Single	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Shell connection	ISOLATED	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	ISOLATED	DRAIN
Minimum drain-source breakdown voltage	500 V	-	500 V	60 V	650 V	200 V	100 V	200 V	500 V	100 V
Maximum drain current (ID)	50 A	-	20 A	70 A	14 A	40 A	20 A	11 A	50 A	70 A
Maximum drain-source on-resistance	0.1 Ω	-	0.3 Ω	0.018 Ω	0.6 Ω	0.06 Ω	0.2 Ω	0.5 Ω	0.1 Ω	0.025 Ω
JESD-30 code	R-PUFM-X7	-	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	R-PUFM-X8	O-MBFM-P2
Number of components	2	-	1	1	1	1	1	1	2	1
Number of terminals	7	-	2	2	2	2	2	2	8	2
Maximum operating temperature	150 °C	150 °C	-	150 °C	-	-	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	METAL	METAL	METAL	METAL	METAL	METAL	PLASTIC/EPOXY	METAL
Package shape	RECTANGULAR	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR	ROUND
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum power consumption environment	600 W	-	-	250 W	-	-	125 W	125 W	800 W	250 W
Maximum pulsed drain current (IDM)	200 A	-	-	280 A	-	-	80 A	44 A	200 A	280 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	UNSPECIFIED	-	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	UNSPECIFIED	PIN/PEG
Terminal location	UPPER	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	UPPER	BOTTOM
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	-	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay
JEDEC-95 code	-	-	TO-204AE	TO-204AE	TO-204AE	TO-204AE	TO-204AA	TO-204AA	-	TO-204AE

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