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2SK1960

Description
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
File Size36KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK1960 Overview

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1960 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
• Gate can be driven by 1.5 V
• Low ON resistance
R
DS(on)
= 0.8
MAX.
R
DS(on)
= 0.2
MAX.
@ V
GS
= 1.5 V, I
D
= 0.1 A
@ V
GS
= 4.0 V, I
D
= 1.5 A
0.8 MIN.
FEATURES
S
0.42 ±0.06
1.5
D
G
0.42 ±0.06
0.47
±0.06
3.0
0.41
+0.03
–0.05
Marking: NR
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
10 ms, duty cycle
50 %
16 cm
2
×
0.7 mm ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
16
±7.0
±3.0
±6.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11223EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
4.0 ±0.25
2.5 ±0.1
©
1996
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