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SSR30C100S1TXV

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SSR30C100S1TXV Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN

SSR30C100S1TXV Parametric

Parameter NameAttribute value
package instructionR-XBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
JESD-30 codeR-XBCC-N3
Maximum non-repetitive peak forward current180 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature250 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1

SSR30C100S1TXV Related Products

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Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN
package instruction R-XBCC-N3 R-XBCC-N3 SMD1, 3 PIN SMD1, 3 PIN SMD1, 3 PIN SMD1, 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XBCC-N3 R-XBCC-N3 R-XBCC-N3 R-XBCC-N3 R-XBCC-N3 R-XBCC-N3
Maximum non-repetitive peak forward current 180 A 180 A 180 A 180 A 180 A 180 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 250 °C 250 °C 250 °C 250 °C 250 °C 250 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 30 A 30 A 30 A 30 A 30 A 30 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 1000 V 1000 V 1200 V 1200 V 1200 V
surface mount YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
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