Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN
Parameter Name | Attribute value |
package instruction | R-XBCC-N3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
application | GENERAL PURPOSE |
Shell connection | CATHODE |
Configuration | SINGLE |
Diode component materials | SILICON CARBIDE |
Diode type | RECTIFIER DIODE |
JESD-30 code | R-XBCC-N3 |
Maximum non-repetitive peak forward current | 180 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 3 |
Maximum operating temperature | 250 °C |
Minimum operating temperature | -55 °C |
Maximum output current | 30 A |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1000 V |
surface mount | YES |
technology | SCHOTTKY |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Base Number Matches | 1 |
SSR30C100S1TXV | SSR30C100S1TX | SSR30C100S1S | SSR30C120S1S | SSR30C120S1TXV | SSR30C120S1TX | |
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Description | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN |
package instruction | R-XBCC-N3 | R-XBCC-N3 | SMD1, 3 PIN | SMD1, 3 PIN | SMD1, 3 PIN | SMD1, 3 PIN |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
Shell connection | CATHODE | CATHODE | CATHODE | CATHODE | CATHODE | CATHODE |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | R-XBCC-N3 | R-XBCC-N3 | R-XBCC-N3 | R-XBCC-N3 | R-XBCC-N3 | R-XBCC-N3 |
Maximum non-repetitive peak forward current | 180 A | 180 A | 180 A | 180 A | 180 A | 180 A |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 250 °C | 250 °C | 250 °C | 250 °C | 250 °C | 250 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
Maximum output current | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 1000 V | 1000 V | 1000 V | 1200 V | 1200 V | 1200 V |
surface mount | YES | YES | YES | YES | YES | YES |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maker | - | - | SSDI | SSDI | SSDI | SSDI |