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MA6X1210G

Description
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN
CategoryDiscrete semiconductor    diode   
File Size209KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA6X1210G Overview

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN

MA6X1210G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 3 ELEMENTS
Maximum diode capacitance2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G6
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA6X1210G
Silicon epitaxial planar type
For switching circuit
Features
Package
Code
Mini6-G3
Pin Name
M
ain
Di
sc te
on na
tin nc
ue e/
d
Three isolated elements contained in one package, allowing high-
density mounting
Short reverse recovery time t
rr
Small terminal capacitance C
t
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage
Maximum peak reverse voltage
Forward current
*1
Peak forward current
*1
V
RM
I
FM
Non-repetitive peak forward
surge current
*1, 2
Junction temperature
Storage temperature
I
FSM
T
j
T
stg
−55
to
+150
Note) *1: Value for single diode
*2: t
=
1 s
on
Parameter
Symbol
V
F
I
R
t
rr
tin
Electrical Characteristics
T
a
=
25°C
±
3°C
isc
Forward voltage
Reverse voltage
Reverse current
V
R
C
t
Ma
int
en
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Publication date: March 2009
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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Rating
80
80
Unit
V
V
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 3
5: Anode 2
6: Anode 1
Marking Symbol: M2D
Internal Connection
(A3)
4
(A2)
5
100
225
500
150
mA
mA
mA
°C
(A1)
6
°C
3
(C2)
2
(C2)
1
(C1)
ue
Conditions
Min
Typ
Max
1.2
Unit
V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
75 V
/D
80
V
ce
an
100
2
3
nA
pF
ns
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1

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