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ML4560-33

Description
60V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

ML4560-33 Overview

60V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE

ML4560-33 Parametric

Parameter NameAttribute value
package instructionO-CEMW-N1
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage60 V
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N1
Number of terminals1
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
Base Number Matches1

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