M485L0914DT0-LA2 datasheet, PDF

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M485L0914DT0-LA2: DescriptionDDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200; Categorystorage storage; File Size144KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M485L0914DT0-LA2 Overview

DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200

M485L0914DT0-LA2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
memory density	603979776 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	200
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.0125 A
Maximum slew rate	1.5 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

M485L0914DT0-LA2 Related Products

	M485L0914DT0-LA2	M485L0914DT0-CA2	M485L0914DT0-LB3	M485L0914DT0-LB0	M485L0914DT0-CB3	M485L0914DT0-CB0
Description	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 8MX72, 0.75ns, CMOS, SODIMM-200
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Contacts	200	200	200	200	200	200
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	603979776 bit	603979776 bit	603979776 bit	603979776 bit	603979776 bit	603979776 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72
Humidity sensitivity level	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8MX72	8MX72	8MX72	8MX72	8MX72	8MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
self refresh	YES	YES	YES	YES	YES	YES
Maximum standby current	0.0125 A	0.0125 A	0.0125 A	0.0125 A	0.0125 A	0.0125 A
Maximum slew rate	1.5 mA	1.5 mA	1.5 mA	1.5 mA	1.5 mA	1.5 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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