BC817 to BC818
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
- 16, - 25, and - 40 according to their current gain.
• As complementary types, the PNP transistors
BC807 and BC808 are recommended.
2
1
1
B
3
18822
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Parts Table
Part
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
Ordering code
BC817-16-GS08
BC817-25-GS08
BC817-40-GS08
BC818-16-GS08
BC818-25-GS08
BC818-40-GS08
6A
6B
6C
6E
6F
6G
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - emitter voltage (Base
shorted)
Collector - emitter voltage (Base
open)
Emitter - base voltage
Collector current
Collector peak current
Peak base current
Peak emitter current
Power dissipation
1)
Test condition
Part
BC817
BC818
BC817
BC818
Symbol
V
CES
V
CES
V
CEO
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
Value
50
30
45
25
5
800
1000
200
1000
310
1)
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
1)
T
SB
= 50 °C
P
tot
Device on fiberglass substrate, see layout on third page.
Document Number 85114
Rev. 1.2, 20-Dec-04
www.vishay.com
1
BC817 to BC818
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Thermal resistance junction to
substrate backside
Junction temperature
Storage temperature range
1)
VISHAY
Test condition
Symbol
R
thJA
R
thSB
T
j
T
S
Value
450
1)
320
1)
150
- 65 to + 150
Unit
°C/W
°C/W
°C
°C
Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
DC current gain (current gain
group - 16)
DC current gain (current gain
group - 25)
DC current gain (current gain
group - 40)
DC current gain
Collector saturation voltage
Base saturation voltage
Base - emitter voltage
Collector-emitter cut-off current
Test condition
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 500 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 1 V, I
C
= 500 mA
V
CE
= 45 V
V
CE
= 25 V
V
CE
= 25 V, T
j
= 150 °C
Emitter-base cut-off current
V
EB
= 4 V
BC817
BC818
Part
Symbol
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
BEsat
V
BEon
I
CES
I
CES
I
CES
I
EBO
Min
100
160
250
40
0.7
1.3
1.2
100
100
5
100
V
V
V
nA
nA
µA
nA
Typ
Max
250
400
600
Unit
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
V
CB
= 10 V, f = 1 MHz
Symbol
f
T
C
CBO
Min
Typ
100
12
Max
Unit
MHz
pF
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2
Document Number 85114
Rev. 1.2, 20-Dec-04
VISHAY
Layout for R
thJA
test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
BC817 to BC818
Vishay Semiconductors
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
mW
500
mA
3
10
25 °C
150 °C
50 °C
typical
limits
@ Tamb = 25 °C
400
P
tot
I
C
10
2
300
10
200
100
1
0
19195
0
100
TSB
200 °C
19162
-1
10 0
1
V
BE
2
V
Figure 1. Admissible Power Dissipation vs. Temperature of
Substrate Backside
Figure 2. Collector Current vs. Base-Emitter Voltage
Document Number 85114
Rev. 1.2, 20-Dec-04
www.vishay.com
3
BC817 to BC818
Vishay Semiconductors
10
0
r
thSB
R
thSB
1000
V
CE = 1
V
hFE
150 °C
100
Tamb = 25 °C
- 50 °C
VISHAY
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
0.005
n
=0
tp
tp
T
-2
10
-2
n=
T
P
I
10
10 10
-7
10
-6
19273
-3
10
-5
10
-4
10
t
p
-3
10
10
-1
1s
-1
10
1
10
IC
10
2
10
3
19166
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. DC Current Gain vs. Collector Current
MHz
10
3
Tamb = 25 °C
f = 20 MHz
V
2
fT
10
2
V
CE = 5
V
1
V
V
BEsat
1
IC
= 10
IB
typical
limits
@ Tamb = 25 °C
- 50 °C
25 °C
150 °C
10
1
19164
10
IC
10
2
10
3
mA
19167
0
10
-1
1
10
IC
10
2
10
mA
3
Figure 4. Gain-Bandwidth Product vs. Collector Current
Figure 7. Base Saturation Voltage vs. Collector Current
V
0.5
0.4
V
CEsat
0.3
0.2
IC
= 10
IB
typical
limits
@ Tamb = 25 °C
IC
mA
500
3.2
2.8
2.4
2
1.8
1.6
1.4
1.2
0.8
1
0.6
0.4
I B = 0.2 mA
400
300
200
25 °C
0.1
150 °C
- 50 °C
2
3
100
0
19168
0
19165
10
-1
1
10
IC
10
10
mA
0
1
V
CE
2
V
Figure 5. Collector Saturation Voltage vs. Collector Current
Figure 8. Common Emitter Collector Characteristics
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4
Document Number 85114
Rev. 1.2, 20-Dec-04
VISHAY
BC817 to BC818
Vishay Semiconductors
mA
500
0.35
0.3
0.25
IC
mA
100
0.9
0.85
V
BE = 0.7
V
0.8
80
IC
60
40
400
300
0.2
0.15
0.1
200
100
0.75
20
IB = 0.05 mA
0
10
V
CE
20
V
19170
0
19169
0
0
1
V
CE
2
V
Figure 9. Common Emitter Collector Characteristics
Figure 10. Common Emitter Collector Characteristics
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85114
Rev. 1.2, 20-Dec-04
www.vishay.com
5
Microchip MCU
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