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ST333C08CCM3PBF

Description
Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size172KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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ST333C08CCM3PBF Overview

Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3

ST333C08CCM3PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBUTTON
package instructionDISK BUTTON, O-CEDB-N2
Contacts2
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Shell connectionISOLATED
Nominal circuit commutation break time12 µs
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
Maximum leakage current50 mA
On-state non-repetitive peak current11500 A
Number of components1
Number of terminals2
Maximum on-state current720000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current1435 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperature40
Trigger device typeSCR
Base Number Matches1

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