MBR20100-1P datasheet, PDF - EEWORLD Datasheet

MBR20100-1P: Description10 A, 80 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size254KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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MBR20100-1P Overview

10 A, 80 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Number of terminals	2
Number of components	2
Processing package description	Lead FREE, Plastic, Surface Mount-220, D2PAK-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	single
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	COMMON CATHODE, 2 ELEMENTS
Shell connection	CATHODE
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	80 V
Maximum average forward current	10 A
Maximum non-repetitive peak forward current	150 A

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