5.0V 1.0W RF Power Amplifier IC for 2.4 GHz ISM
ITT3301GJ
FEATURES
•
•
•
•
•
•
•
Single Positive Supply
45% Power Added Efficiency
100% Duty Cycle
2000 to 2900 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
®
-Lite MESFET Process
ADVANCED
INFORMATION
Description
The ITT3301GJ is an RF power amplifier based
on GaAsTek’s Self-Aligned MSAG
®
MESFET
Process. This product is designed for use in
2.4 GHz ISM products.
Maximum Ratings
(T
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature Range
A
= 25 °C unless otherwise noted)
Symbol
V
DD
P
IN
T
J
T
STG
Value
6.5
10
150
-40 to
+150
Unit
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
= 5.0 V, P
IN
= +5 dBm,
Characteristic
Frequency Range
Output Power,
f = 2450 MHz
Power Added Efficiency,
f = 2450 MHz
Harmonics
Input VSWR
Off Isolation
(V
DD
=0 V)
Thermal Resistance, Junction to Case
Load Mismatch
(V
DD
= 5.5 V, VSWR = 8:1, P
IN
= 0 dBm)
Stability
(P
IN
= 0 to +10 dBm, V
DD
= 0-5.5 V, Load VSWR = 5:1, fixed
phases)
Duty Cycle = 100 %, T
A
=25 °C, Output externally matched to 50
Ω
Symbol
ƒ
P
OUT
η
2ƒ, 3ƒ, 4 ƒ
—
—
R
th
—
—
Min
2400
Typ
29.5
45
—
—
40
Max
2500
-30
2.0:1
Unit
MHz
dBm
%
dBc
—
dB
25
°C/W
No Degradation in Power Output
All non-harmonically related outputs more
than 60 dB below desired signal
Advance Information - Specifications Subject to Change Without Notice
902434 --, April 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
1
Automotive Electronics
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