DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BSBU-800-1C
FEATURES
MECHANICAL SPECIFICATION
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
C2
C
C1
A
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 300 AMPS PEAK
D
D3
_
D2
+
D
D1
A1
THRU-HOLE FOR EASY HEAT SINK MOUNTING
L
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
L1
B1
B
Case: Molded plastic, U/L Flammability Rating 94V-0
SYM
A
MILLIMETERS
MIN
6.6
4.7
1.22
4.57
22.7
4.2
3.6
n/a
10.3
1.7
16.5
25.4
4.57
MAX
7.1
5.2
1.32
5.59
23.24
4.7
4.1
19.3
11.3
2.2
17.8
n/a
6.8
INCHES
MIN
0.260
0.185
0.048
0.180
0.895
0.165
0.140
n/a
0.405
0.065
0.660
1.0
0.180
MAX
0.280
0.205
0.052
0.220
0.915
0.185
0.160
0.760
0.455
0.085
0.700
n/a
0.260
Terminals: Round silver plated pins
A1
B
B1
C
C1
C2
D
D1
D2
D3
L
L1
Soldering: Per MIL-STD 202 Method 208 guaranteed
_
+
Polarity: Marked on case
Mounting Position: Any. Max. mounting torque = 5 in lb
SERIES SBU8A - SBU8M
Weight: 0.3 Ounces (8 Grams)
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Peak Recurrent Reverse Voltage
Average Forward Rectified Current
T
C
= 100
o
C (Notes 1, 3)
SYMBOL
SBU
8A
V
RM
V
RMS
V
RRM
I
O
I
FSM
V
FM
o
RATINGS
SBU
8B
100
70
100
SBU
8D
200
140
200
SBU
8G
400
280
400
8
SBU
8J
600
420
600
SBU
8K
800
560
800
SBU
8M
1000
700
1000
UNITS
50
35
50
VOLTS
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T
J
= 150
O
C
Maximum Forward Voltage (Per Diode) at 8 Amps DC
@ T
A
= 25 C
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
@ T
A
= 125
o
C
Junction to Ambient (Note 2)
Typical Thermal Resistance
Junction to Case (Note 1)
Operating and Storage Temperature Range
AMPS
300
0.95 (Typ. 0.90)
5 (Typical < 0.5
m
A)
0.5
16
3
-55 to +150
VOLTS
µA
mA
°C/W
°C
3.01 08sbu
I
RM
R
θJA
R
θJC
T
J
,T
STG
NOTES: (1) Bridge mounted on 3.2" sq. x 0.12" thick (8.2cm sq. x 0.3cm) aluminum plate
(2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm)
(3) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer.
E29
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BSBU-800-2C
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES SBU8A - SBU8M
300
NOTE 1
250
200
60Hz
150
NOTE 2
100
Temperature,
o
C
FIGURE 1. FORWARD CURRENT DERATING CURVE
50
1
10
100
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
100
50
10
10
NOTE 3
1.0
T
J
= 100
o
C
1.0
0.1
T
J
= 25
o
C
0.1
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage
400
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTE 4
100
NOTES
(1) Case Temperature, T
C,
With Bridge Mounted on
3.2" Sq. x 0.12" Thick (8.2cm Sq. x 0.3cm)
Aluminum Plate
(2) T
J
= 150
o
C
10
1
10
100
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
(3) T
J
= 25
o
C; Pulse Width = 300
µ
Sec; 1% Duty Cycle
(4) T
J
= 25
o
C; f = 1 MHz; Vsig = 50mVp-p
E30
3.1 08sbu