NAND08GW3B3AZC1F datasheet, PDF

NAND08GW3B3AZC1F: DescriptionFlash, 1GX8, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63; Categorystorage storage; File Size999KB，59 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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NAND08GW3B3AZC1F Overview

Flash, 1GX8, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	LFBGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Is Samacsys	N
Maximum access time	35 ns
JESD-30 code	R-PBGA-B63
length	15 mm
memory density	8589934592 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	63
word count	1073741824 words
character code	1000000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1GX8
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
width	8.5 mm
Base Number Matches	1

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