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L1050-66-60

Description
10.91mm, 1 ELEMENT, INFRARED LED, 1050nm, COMPACT, TO-66, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size76KB,1 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric View All

L1050-66-60 Overview

10.91mm, 1 ELEMENT, INFRARED LED, 1050nm, COMPACT, TO-66, 2 PIN

L1050-66-60 Parametric

Parameter NameAttribute value
package instructionCOMPACT, TO-66, 2 PIN
Reach Compliance Codeunknown
Is SamacsysN
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Maximum forward current0.8 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Optoelectronic device typesINFRARED LED
Nominal output power120 mW
peak wavelength1050 nm
shapeROUND
size10.91 mm
Base Number Matches1
epitex
Opto-Device & Custom LED
Infrared illuminator
L1050-66-60
L1050-66-60
epoxy lens type Infrared illuminator
L1050-66-60 is a wide viewing and extremely high output power illuminator assembled
with a total of 60 high efficiency GaAs diode chips, mounted on a metal stem TO-66
with AlN ceramics and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking
to improve thermal conductive efficiency.
Features
♦Outer
dimension (Unit: mm)
1) High reliability
2) Compact (TO-66) package
3) High output power at 1050nm
♦Applications
1) For IR search light
2) For CCD lighting
Specifications
1) Product name
2) Spec. No.
3) Chip
(1) Material
(2) Peak wavelength
4) Package
(1) Stem
(2) Lens
IR illuminator
L1050-66-60
GaAs
1050m
TO-66 stem with AlN
Clear silicone and epoxy lens
♦Absolute
Maximum Ratings
Item
Unit
Symbol
Maximum Rated Value
Ambient Temp.
Power Dissipation
P
D
6.0
W
Ta=25°C
Forward Current
I
F
800
mA
Ta=25°C
Reverse Voltage
V
R
50
V
Ta=25°C
Operating Temperature
T
OPR
-30 ~ +80
°C
-30 ~ +110
°C
Storage Temperature
T
STG
Soldering Temperature
T
SOL
240
°C
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical
Characteristics
Item
Symbol Condition
Minimum
Total Radiated Power
P
O
I
F
=600mA
Forward Voltage
V
F
I
F
=600mA
Reverse Current
V
R
I
R
=10uA
30
Peak Wavelength
1000
I
F
=600mA
λ
P
Half Width
I
F
=600mA
∆λ
Viewing Half Angle
I
F
=600mA
θ
1/2
Rise Time
I
F
=100mA
½½
Fall Time
I
F
=100mA
½½
‡Heat sink is required thermal resistance <8K/W
Typical
120
7.0
1050
55
±60
15
10
Maximum
1100
Unit
mW
V
V
nm
nm
deg.
ns
ns
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com

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