2SC3788 datasheet, PDF - EEWORLD Datasheet

2SC3788: DescriptionPower Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size134KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC3788 Overview

Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN

Parameter Name	Attribute value
Objectid	1481157048
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

	2SC3788	2SA1478
Description	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN	High-Definition CRT Display, Video Output Applications
Parts packaging code	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	200 V	200 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	5 W	5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz

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