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CFH2162-P5

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size530KB,3 Pages
ManufacturerMimix Broadband (MACOM)
Websitehttp://www.macom.com
Download Datasheet Parametric View All

CFH2162-P5 Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

CFH2162-P5 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-CDFM-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyJUNCTION
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
CFH2162-P5
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