MGSF1N02LT3G datasheet, PDF - EEWORLD Datasheet

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MGSF1N02LT3G: DescriptionPower MOSFET 750 mAmps, 20 Volts N-Channel SOT-23; CategoryDiscrete semiconductor The transistor; File Size147KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MGSF1N02LT3G Overview

Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23

MGSF1N02LT3G Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	CASE 318-08
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.75 A
Maximum drain current (ID)	0.75 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

MGSF1N02LT3G Related Products

	MGSF1N02LT3G	MGSF1N02LT3	MGSF1N02LT1_05
Description	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
Is it Rohs certified?	conform to	incompatible	-
Maker	ON Semiconductor	ON Semiconductor	-
Parts packaging code	SOT-23	SOT-23	-
package instruction	SMALL OUTLINE, R-PDSO-G3	MINIATURE, CASE 318-08, TO-236, SOT-23, 3 PIN	-
Contacts	3	3	-
Manufacturer packaging code	CASE 318-08	CASE 318-08	-
Reach Compliance Code	compli	_compli	-
ECCN code	EAR99	EAR99	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	20 V	20 V	-
Maximum drain current (Abs) (ID)	0.75 A	0.75 A	-
Maximum drain current (ID)	0.75 A	0.75 A	-
Maximum drain-source on-resistance	0.09 Ω	0.09 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-236AB	TO-236AB	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-
JESD-609 code	e3	e0	-
Number of components	1	1	-
Number of terminals	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	240	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.4 W	0.225 W	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal surface	MATTE TIN	Tin/Lead (Sn/Pb)	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-
Maximum time at peak reflow temperature	40	30	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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