EDI88512LPA55TI datasheet, PDF

EDI88512LPA55TI: DescriptionStandard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size159KB，9 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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EDI88512LPA55TI Overview

Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Code	unknown
Is Samacsys	N
Maximum access time	55 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDIP-T32
length	40.64 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.937 mm
Maximum standby current	0.002 A
Minimum standby current	2 V
Maximum slew rate	0.225 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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