Power Field-Effect Transistor, 2.25A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown |
Is Samacsys | N |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 450 V |
Maximum drain current (Abs) (ID) | 2.25 A |
Maximum drain current (ID) | 2.25 A |
Maximum drain-source on-resistance | 2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-205AF |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 25 W |
Maximum power dissipation(Abs) | 25 W |
Maximum pulsed drain current (IDM) | 9 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 85 ns |
Maximum opening time (tons) | 60 ns |
Base Number Matches | 1 |