2SB791(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD970(K)
Outline
TO-220AB
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2 3
2 kΩ
(Typ)
200
Ω
(Typ)
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
Rating
–120
–120
–7
–8
–12
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB791(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.5
1.6
1.5
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
—
—
—
V
V
V
V
µs
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –50 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= I
B2
= –8 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
1. Pulse test
h
FE
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
V
BE(sat)(2)
t
on
t
stg
t
f
Maximum Collector Dissipation
Curve
60
Collector power dissipation P
C
(W)
–30
i
C(peak)
–10
Area of Safe Operation
1
µs
10
µ
PW
Collector current I
C
(A)
40
–3
–1.0
–0.3
–0.1
DC
I
Cmax
(Continuous)
Op
s
1m
=1
er
s
at
0m
s
=2
io
n
(T
C
20
5
°
C
Ta = 25°C
1 Shot Pulse
)
0
50
100
Case temperature T
C
(°C)
150
–0.03
–1
–3
–10 –30 –100 –300 –1,000
Collector to emitter voltage V
CE
(V)
2
2SB791(K)
Typical Output Characteristics
–10
T
C
= 25°C
10000
DC current transfer ratio h
FE
P
C
5W
=2
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
DC Current Transfer Ratio vs.
Collector Current
Collector current I
C
(A)
–8
3000
–6
–4
–1.5
–1.0
°
C
75
=
°
C
T
C
25
°
C
5
–2
1000
V
CE
= –3 V
300
–0.5 mA
–2
I
B
= 0
0
–1
–2
–3
–4
–5
Collector to emitter voltage V
CE
(V)
100
–0.1
–0.3
–1.0
–3
–10
Collector current I
C
(A)
Saturation Voltage vs.
Collector Current
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter sauration voltage V
BE(sat)
(V)
–10
–5
T
C
= 25°C
500
V
BE(sat)
I
C
/I
B
= 500
200
Switching time t (µs)
I
C
/I
B
= 200
10
3
1.0
0.3
0.1
0.03
0.01
–0.1
Switching Time vs. Collector Current
–2
–1.0
–0.5
t
stg
t
f
t
on
V
CE(sat)
–0.2
–0.1
–0.1 –0.2
V
CC
= –30V
I
C
= 500 I
B1
= –500 I
B2
Ta = 25°C
–3
–0.3
–1.0
Collector current I
C
(A)
–10
–0.5 –1.0 –2
–5
Collector current I
C
(A)
–10
3
2SB791(K)
Transient Thermal Resistance
10
Thermal resistance
θ
j-r
(°C/W)
3
1.0
0.3
0.1
0.03
0.01
1
1
10
10
Time t
100
100
1,000 (s)
1,000 (ms)
T
C
= 25°C
–1-1,000 s
1-1,000 ms
4
Unit: mm
11.5 MAX
2.79
±
0.2
10.16
±
0.2
9.5
8.0
φ
3.6
-0.08
+0.1
4.44
±
0.2
1.26
±
0.15
6.4
+0.2
–0.1
18.5
±
0.5
15.0
±
0.3
1.27
2.7 MAX
14.0
±
0.5
1.5 MAX
7.8
±
0.5
0.76
±
0.1
2.54
±
0.5
2.54
±
0.5
0.5
±
0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
京公网安备 11010802033920号
EEWORLD
