Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
Is Samacsys | N |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (ID) | 7 A |
Maximum drain-source on-resistance | 1.1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | 225 |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 28 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
Transistor component materials | SILICON |
Base Number Matches | 1 |