NAND256W4A3DZA6E datasheet, PDF

NAND256W4A3DZA6E: DescriptionFlash, 16MX16, 12000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size150KB，5 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND256W4A3DZA6E Overview

Flash, 16MX16, 12000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	BGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Is Samacsys	N
Maximum access time	12000 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
memory density	268435456 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
Base Number Matches	1

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