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BZT03-C10T/R

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size53KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZT03-C10T/R Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor

BZT03-C10T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage9.4 V
Shell connectionISOLATED
Maximum clamping voltage14.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Certification statusNot Qualified
Maximum reverse current20 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BZT03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Jun 11
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