Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Central Semiconductor |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Maximum collector current (IC) | 0.6 A |
Collector-based maximum capacity | 8.5 pF |
Collector-emitter maximum voltage | 40 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 100 |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 0.35 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 200 MHz |
Maximum off time (toff) | 255 ns |
Maximum opening time (tons) | 35 ns |
VCEsat-Max | 0.75 V |
Base Number Matches | 1 |