KBJ1006G datasheet, PDF - EEWORLD Datasheet

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KBJ1006G: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size363KB，5 Pages; ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.; Environmental Compliance

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KBJ1006G Overview

Bridge Rectifier Diode,

KBJ1006G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction	R-PSFM-T4
Reach Compliance Code	compliant
Is Samacsys	N
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

KBJ1006G Related Products

	KBJ1006G	KBJ10005G	KBJ1001G	KBJ1002G	KBJ1004G	KBJ1008G	KBJ1010G
Description	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Is Samacsys	N	N	N	N	N	N	N
Minimum breakdown voltage	600 V	50 V	100 V	200 V	400 V	800 V	1000 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	50 V	100 V	200 V	400 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1

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