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M29F100BB90M3

Description
64KX16 FLASH 5V PROM, 70ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
Categorystorage    storage   
File Size145KB,22 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29F100BB90M3 Overview

64KX16 FLASH 5V PROM, 70ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M29F100BB90M3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.525 INCH, PLASTIC, SO-44
Contacts44
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.2 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,1
Number of terminals44
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize64KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height2.62 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width13.3 mm
Base Number Matches1
M29F100BT
M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)
Single Supply Flash Memory
s
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8µs per Byte/Word typical
5 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 2 Main Blocks
1
44
s
s
s
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
TSOP48 (N)
12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F100BT: 00D0h
– Bottom Device Code M29F100BB: 00D1h
A0-A15
W
E
G
RP
VCC
s
16
15
DQ0-DQ14
DQ15A–1
M29F100BT
M29F100BB
BYTE
RB
s
s
s
s
VSS
AI02916
July 2000
1/22
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