HN1A01F-Y(T5LMAA,F datasheet, PDF

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Datasheet> All Categories > Discrete semiconductor> The transistor> HN1A01F-Y(T5LMAA,F

HN1A01F-Y(T5LMAA,F: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size228KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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HN1A01F-Y(T5LMAA,F Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

HN1A01F-Y(T5LMAA,F Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

HN1A01F-Y(T5LMAA,F Related Products

	HN1A01F-Y(T5LMAA,F	HN1A01F-Y(TE85L,F)	HN1A01F-GR(TE85L,F	HN1A01F-GR	HN1A01F-GR(TE85L,F)	HN1A01F-GR(5LMAA,F	HN1A01F-Y
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon	TRANS 2PNP 50V 0.15A SM6	TRANS 2PNP 50V 0.15A SM6	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, 6 PIN, BIP General Purpose Small Signal	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	-	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6	-	-	SMALL OUTLINE, R-PDSO-G6	,	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown	-	-	unknown	unknown	unknown	unknown
Is Samacsys	N	-	-	N	N	N	N
Maximum collector current (IC)	0.15 A	-	-	0.15 A	-	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	-	-	50 V	-	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS	-	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	120	-	-	200	-	200	120
JESD-30 code	R-PDSO-G6	-	-	R-PDSO-G6	-	R-PDSO-G6	R-PDSO-G6
Number of components	2	-	-	2	-	2	2
Number of terminals	6	-	-	6	-	6	6
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	-	-	PNP	-	PNP	PNP
surface mount	YES	-	-	YES	-	YES	YES
Terminal form	GULL WING	-	-	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	-	-	DUAL	-	DUAL	DUAL
transistor applications	AMPLIFIER	-	-	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	-	SILICON	-	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	-	-	80 MHz	-	80 MHz	80 MHz
Base Number Matches	1	-	-	1	1	1	1

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