2N5551 datasheet, PDF - EEWORLD Datasheet

2N5551: Description600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size130KB，2 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

Download Datasheet Parametric Compare View All

2N5551 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	2N5551	-	-	View	Buy Now

600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.6000 A
Maximum Collector-Emitter Voltage	160 V
state	DISCONTINUED
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Maximum ambient power consumption	0.6250 W
Transistor type	Universal small signal
Minimum DC amplification factor	30
Rated crossover frequency	100 MHz

	2N5551	2N5550	HN5551	HN5550
Description	600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	NPN high-voltage transistors	NPN high-voltage transistors	NPN high-voltage transistors

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components