Ku-BAND MEDIUM
POWER GaAs MESFET
FEATURES
•
•
CLASS A OPERATION
HIGH OUTPUT POWER
P
OUT
= 26.5 dBm
G
1dB
= 7 dB
HIGH POWER ADDED EFFICIENCY
Linear Gain (dB)
NE9000 SERIES
NE9001 SERIES
NE9002 SERIES
TYPICAL LINEAR GAIN vs. FREQUENCY
24
21
18
NE9000
15
NE9001/9002
•
DESCRIPTION
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configu-
rations available are: the NE900000, a one cell die of 400
µm
gate width; the NE900100, a one cell die of 750
µm
gate
width; and the NE900200, a two cell die of 1500
µm
total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around source-
metallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
12
9
6
3
2.0
10.0
Frequency (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
NE900089A
89A
UNITS MIN TYP MAX
mA
V
V
V
mS
mS
mS
°C/W
W
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
%
20.5
20
23
25
9
8
7
7
27
27
27
26
19.5
20.5
19.5
20.5
22
23
25.5
26.5
80
-1.5
120
-3.5
150
-5
NE900000
NE900000G
NE900075
00 (CHIP), 75
MIN TYP MAX
80
-1.5
120
-3.5
150
-5
-2
-3.5
-5
-2
25
25
50
100
180
0.8
180
0.8
100
1.5
50
3
-3.5
-5
NE900100
NE900100G
NE900175
00 (CHIP), 75
MIN TYP MAX
150
225
300
NE900200
NE900200G
NE900275
00 (CHIP), 75
MIN TYP MAX
300
450
600
SYMBOLS
I
DSS
V
P
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Saturated Drain Current at
V
DS
= 2.5 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 2.5 V,
I
DS
= 2.5 mA
I
DS
= 5 mA
I
DS
= 10 mA
Transconductance at V
DS
= 2.5 V,
I
DS
= 50 mA
I
DS
= 90 mA
I
DS
= 180 mA
Thermal Resistance (Channel-to-Case)
Total Power Dissipation
Power Output at Test Point
P
IN
= 11 dBm, V
DS
= 8V, I
D
= 50mA,
f = 8 GHz
P
IN
= 12 dBm,V
DS
= 8V, I
D
= 50mA
f = 14.5 GHz
P
IN
= 15 dBm, V
DS
= 8V, I
D
= 90mA
f = 14.5 GHz
P
IN
= 19 dBm, V
DS
= 8 V, I
D
= 180 mA,
f = 14.5
Output Power at 1 dB Compression
Point,
V
DS
= 8 V, I
D =
50 mA, f = 8 GHz
V
DS
= 8 V, I
D
= 50 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 90 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 180 mA, f = 14.5 GHz
Gain at 1 dB Compression Point
V
DS
= 8 V, I
D
= 50 mA, f = 8 GHz
V
DS
= 8 V, I
D
= 50 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 90 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 180 mA, f = 14.5 GHz
Power Added Efficiency
V
DS
= 8 V, at P
1dB
Conditions.
g
m
R
TH (C-C)
P
T
P
TEST
P
1dB
G
1dB
η
ADD
California Eastern Laboratories
NE9000, NE9001, NE9002 SERIES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C)
SYMBOLS
V
DS
V
GS
I
D
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
Gate Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
UNITS
V
V
mA
mA
mA
mA
mA
mA
RATINGS
20
-9
150
300
600
1.3
2.6
5
Total Power Dissipation, PT (W)
3
POWER DERATING CURVE
NE9002
2
NE9001
1
I
G
NE9000
0
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 75
φ
1.8
+0.15
-0.05
2 PLACES
GATE
SOURCE
2.7±0.3
2.3±0.1
0
50
100
150
200
Case Temperature, T
A
(°C)
PACKAGE OUTLINE 89A
0.5 ± 0.1
2.03 ± 0.2
S
4.0 MIN (ALL LEADS)
0.51
DRAIN
2.7 TYP
7.0
+0.06
0.1 -0.02
9.8 MAX
3.0 MIN BOTH
LEADS
D
G
S
1.02
2.3
1.13
1.6 MAX
0.9 MAX
NE900000 (CHIP)
(Units in
µm)
50
400
0.1
NE900100/NE900200 (CHIP)*
(Units in
µm)
52
D
550
50
430
228
D
D
53
G
S
50
62
130
440
240
G
G
S
S
62
142
S
131
Die Thickness: 110 to 160
µm
Recommended Bonding Area.
S
50
Glassivated Area
Plated Wraparound (Optional)
116
80
HANDLING PRECAUTIONS
DIE ATTACHMENT
Die attach can be accomplished with Au-Ge (390
±
10°C) preforms in
a forming gas environment. Epoxy die attach is not recommended.
BONDING
Gate and drain bonding wires should be semi-hard gold wire (3 to 8%
elongation) 30 microns or less in diameter.
Bonding should be performed with a wedge tip that has a taper of
approximately 15°. Die attach and bonding time should be kept to a
minimum. As a general rule, the bonding operation should be kept within
a 300°C to 10 minute curve. If longer periods are required, the tempera-
ture should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip channel
is glassivated for mechanical protection only and does not preclude the
necessity of a clean environment.
The bonding equipment should be periodically checked for sources of
surge voltage and should be properly grounded at all times. In fact, all
test and handling equipment should be grounded to minimize the
possibilities of static discharge.
NE9000, NE9001, NE9002 SERIES
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
NE900000
V
DS
= 8 V, I
D
= 50 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
MAG
.96
.90
.87
.85
.82
.79
.75
.73
.72
.71
.72
.73
.74
.75
.74
.71
.65
S
11
ANG
-42
-59
-73
-85
-94
-103
-112
-120
-128
-134
-140
-144
-147
-149
-151
-152
-155
MAG
3.00
2.71
2.48
2.28
2.10
1.94
1.79
1.64
1.51
1.38
1.27
1.17
1.09
1.04
1.01
1.03
1.10
S
21
ANG
148
136
125
114
105
96
88
80
73
67
62
58
54
51
48
45
40
MAG
.04
.04
.05
.06
.06
.07
.07
.07
.07
.07
.07
.07
.07
.08
.09
.10
.11
S
12
ANG
69
66
62
58
55
53
52
52
53
55
58
63
69
74
78
81
82
MAG
.80
.78
.76
.74
.72
.71
.70
.70
.70
.71
.71
.71
.71
.71
.70
.69
.68
S
22
ANG
-11
-12
-13
-17
-20
-24
-28
-32
-34
-36
-38
-39
-40
-41
-43
-47
-53
NE900100
V
DS
= 8 V, I
D
= 90 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
MAG
.91
.82
.77
.75
.74
.74
.73
.72
.72
.72
.72
.73
.73
.74
.73
.71
.67
S
11
ANG
-63
-81
-97
-110
-120
-129
-135
-141
-145
-148
-150
-152
-153
-155
-157
-161
-167
MAG
4.54
3.70
3.14
2.75
2.44
2.17
1.93
1.70
1.50
1.34
1.21
1.13
1.08
1.05
1.03
1.00
.93
S
21
ANG
137
124
111
100
91
83
77
71
67
62
58
55
51
48
44
41
36
MAG
.05
.05
.06
.06
.07
.07
.07
.07
.07
.07
.07
.08
.08
.09
.10
.12
.13
S
12
ANG
63
55
51
48
47
48
49
52
55
60
65
70
74
78
80
82
82
MAG
.47
.46
.44
.43
.41
.40
.39
.39
.40
.41
.43
.46
.47
.49
.49
.46
.41
S
22
ANG
-26
-33
-38
-43
-47
-53
-58
-64
-70
-76
-81
-86
-90
-94
-98
-102
-109
NE9000, NE9001, NE9002 SERIES
NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
+90˚
+120˚
S21
1.5 GH
Z
S12
18 GH
Z
S12
1.5 GH
Z
S22
18 GHz
+60˚
S11
18 GHz
+30˚
+150˚
±180˚
S22
1.5 GHz
0˚
S21
18 GH
Z
-150˚
S11
1.5 GHz
-30˚
-120˚
-90˚
-60˚
NE900200
V
DS
= 8 V, I
D
= 180 mA
FREQUENCY
GHz
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.910
0.879
0.850
0.836
0.830
0.827
0.823
0.824
0.822
0.820
0.824
0.818
0.815
0.815
0.813
0.811
0.815
0.811
ANG
-88.000
-106.000
-129.000
-143.000
-153.000
-160.000
-165.000
-170.000
-174.000
-178.000
176.000
172.000
167.000
163.000
160.000
157.000
154.000
153.000
MAG
S
21
AN
123.000
112.000
93.000
79.000
69.000
60.000
52.000
44.000
36.000
29.000
22.000
15.000
10.000
4.000
1.000
-5.000
-7.000
-11.000
MAG
0.057
0.065
0.070
0.075
0.077
0.082
0.081
0.086
0.091
0.100
0.108
0.117
0.129
0.146
0.160
0.187
0.207
0.241
S
12
ANG
48.000
41.000
34.000
32.000
30.000
33.000
34.000
38.000
42.000
45.000
45.000
48.000
48.000
49.000
50.000
48.000
48.000
45.000
MAG
0.286
0.274
0.267
0.281
0.303
0.331
0.368
0.406
0.443
0.484
0.524
0.554
0.584
0.601
0.623
0.631
0.635
0.638
S
22
ANG
-56.000
-68.000
-82.000
-92.000
-102.000
-108.000
-114.000
-120.000
-125.000
-130.000
-134.000
-137.000
-141.000
-144.000
-146.000
-151.000
-156.000
-162.000
K
0.240
0.323
0.496
0.629
0.751
0.809
0.914
0.892
0.904
0.827
0.739
0.719
0.671
0.588
0.534
0.454
0.437
0.369
MAG
1
19.300
18.044
16.430
15.075
14.108
13.148
12.647
11.933
11.187
10.414
9.674
8.956
8.137
7.300
6.604
5.670
4.949
4.153
4.852
4.143
3.077
2.413
1.983
1.693
1.490
1.342
1.196
1.100
1.002
0.920
0.840
0.784
0.732
0.690
0.647
0.627
(
K ±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE9000, NE9001, NE9002 SERIES
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
+90˚
+120˚
+60˚
S21
2 GH
Z
+30˚
+150˚
S22
18 GH
Z
S12
18 GH
Z
±180˚
S21
18 GH
Z
S12
2 GH
Z
0˚
S11
18 GH
Z
S11
2 GH
Z
S22
2 GH
Z
-150˚
-30˚
-120˚
-90˚
-60˚
NE900275
V
DS
= 8 V, I
D
= 180 mA
FREQUENCY
GHZ
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.900
0.900
0.870
0.860
0.850
0.850
0.830
0.770
0.690
0.560
0.440
0.480
0.690
0.820
0.900
0.920
0.940
ANG
-123.000
-146.000
-161.000
-172.000
-180.000
172.000
162.000
151.000
135.000
108.000
56.000
-19.000
-69.000
-97.000
-115.000
-126.000
-136.000
S
21
MAG
3.670
2.760
2.140
1.820
1.610
1.510
1.500
1.520
1.600
1.770
1.880
1.770
1.480
1.110
0.860
0.650
0.540
ANG
95.000
76.000
54.000
46.000
26.000
16.000
1.000
-12.000
-34.000
-51.000
-80.000
-116.000
-146.000
-175.000
162.000
141.000
127.000
MAG
0.060
0.060
0.060
0.060
0.060
0.060
0.060
0.070
0.080
0.090
0.100
0.090
0.070
0.050
0.040
0.040
0.050
S
12
ANG
24.000
15.000
3.000
3.000
1.000
-1.000
-3.000
-5.000
-16.000
-26.000
-51.000
-85.000
-121.000
-165.000
158.000
114.000
89.000
MAG
0.230
0.250
0.280
0.320
0.370
0.410
0.450
0.480
0.510
0.540
0.590
0.610
0.610
0.570
0.560
0.580
0.590
S
22
ANG
-97.000
-117.000
-131.000
-143.000
-152.000
-161.000
-170.000
-178.000
173.000
162.000
147.000
128.000
108.000
85.000
65.000
48.000
36.000
K
0.325
0.397
0.698
0.850
0.974
0.972
1.051
1.162
1.227
1.311
1.259
1.408
1.392
1.624
1.416
1.498
1.020
MAG
1
17.865
16.628
15.523
14.819
14.287
14.008
12.595
10.931
10.140
9.594
9.681
9.136
9.522
8.835
9.487
7.938
9.472
(
K ±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
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