IDT70V639S12BC datasheet, PDF - EEWORLD Datasheet

IDT70V639S12BC: Description128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208; Categorystorage; File Size189KB，23 Pages; ManufacturerIDT (Integrated Device Technology, Inc.); Websitehttp://www.idt.com/

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IDT70V639S12BC Overview

128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208

Parameter Name	Attribute value
Number of functions	1
Number of terminals	208
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.45 V
Minimum supply/operating voltage	3.15 V
Rated supply voltage	3.3 V
maximum access time	12 ns
Processing package description	15 × 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
state	ACTIVE
Craftsmanship	CMOS
packaging shape	SQUARE
Package Size	GRID ARRAY, THIN PROFILE, FINE PITCH
surface mount	Yes
Terminal form	BALL
Terminal spacing	0.8000 mm
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	18
organize	128K × 18
storage density	2.36E6 deg
operating mode	ASYNCHRONOUS
Number of digits	131072 words
Number of digits	128K
Memory IC type	dual-port static random access memory
serial parallel	parallel

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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