Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DO-4 |
package instruction | O-MUPM-D1 |
Contacts | 1 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
application | ULTRA FAST RECOVERY |
Shell connection | CATHODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-203AA |
JESD-30 code | O-MUPM-D1 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 400 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 20 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Qualified |
Guideline | MIL-19500/478 |
Maximum repetitive peak reverse voltage | 100 V |
Maximum reverse recovery time | 0.035 µs |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |
JANS1N5814 | Q35.9990-JXS21P4-8-30/50-T1-FU-AEC-LF | JANS1N5812R | Q36.0-JXS21P4-10-20/20-T1-FU-LF | Q40.0-JXS22P4-30-20/15-T1-FU-LF | Q54.0-JXS11-8-30/20-FU-LF | |
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Description | Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | Parallel - Fundamental Quartz Crystal, | Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | Parallel - Fundamental Quartz Crystal, | Parallel - Fundamental Quartz Crystal, | Parallel - Fundamental Quartz Crystal, |
package instruction | O-MUPM-D1 | SMD, 4 PIN | O-MUPM-D1 | SMD, 4 PIN | SMD, 4 PIN | SMD, 4 PIN |
Reach Compliance Code | not_compliant | compliant | compliant | compliant | compliant | compliant |
JESD-609 code | e0 | e4 | e0 | e4 | e4 | e4 |
Maximum operating temperature | 175 °C | 85 °C | 175 °C | 85 °C | 85 °C | 70 °C |
Minimum operating temperature | -65 °C | -40 °C | -65 °C | -40 °C | -40 °C | -20 °C |
surface mount | NO | YES | NO | YES | YES | YES |
Terminal surface | Tin/Lead (Sn/Pb) | Nickel/Gold (Ni/Au) | Tin/Lead (Sn/Pb) | Gold (Au) - with Nickel (Ni) barrier | Gold (Au) - with Nickel (Ni) barrier | GOLD OVER NICKEL |
Is it Rohs certified? | incompatible | conform to | incompatible | conform to | - | conform to |
Objectid | - | 7299164886 | - | 7299165278 | 7301675937 | 7251308243 |
Country Of Origin | - | Taiwan | - | Taiwan | Taiwan | Taiwan |
YTEOL | - | 7.35 | - | 7.35 | 7.35 | 7.35 |
Other features | - | AEC-Q200; AT-CUT; TR, 7 INCH | - | AT-CUT; TR, 7 INCH | AT CUT; TR, 7 INCH | AT-CUT; TR, 7 INCH |
Ageing | - | 3 PPM/FIRST YEAR | - | 3 PPM/FIRST YEAR | 3 PPM/FIRST YEAR | 3 PPM/FIRST YEAR |
Crystal/Resonator Type | - | PARALLEL - FUNDAMENTAL | - | PARALLEL - FUNDAMENTAL | PARALLEL - FUNDAMENTAL | PARALLEL - FUNDAMENTAL |
Drive level | - | 10 µW | - | 10 µW | 10 µW | 10 µW |
frequency stability | - | 0.005% | - | 0.002% | 0.0015% | 0.002% |
frequency tolerance | - | 30 ppm | - | 20 ppm | 20 ppm | 30 ppm |
load capacitance | - | 8 pF | - | 10 pF | 30 pF | 8 pF |
Installation features | - | SURFACE MOUNT | - | SURFACE MOUNT | SURFACE MOUNT | SURFACE MOUNT |
Nominal operating frequency | - | 35.999 MHz | - | 36 MHz | 40 MHz | 54 MHz |
physical size | - | L2.0XB1.6XH0.55 (mm)/L0.079XB0.063XH0.022 (inch) | - | L2.0XB1.6XH0.55 (mm)/L0.079XB0.063XH0.022 (inch) | L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch) | L1.6XB1.2XH0.35 (mm)/L0.063XB0.047XH0.014 (inch) |
Series resistance | - | 50 Ω | - | 40 Ω | 20 Ω | 40 Ω |