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1SMB5955BV-T

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size118KB,8 Pages
ManufacturerRectron
Download Datasheet Parametric View All

1SMB5955BV-T Overview

Zener Diode,

1SMB5955BV-T Parametric

Parameter NameAttribute value
MakerRectron
Reach Compliance Codecompliant
Is SamacsysN
Diode typeZENER DIODE
Base Number Matches1
1SMB5913B
THRU
1SMB5956B
Surface Mount SILICON ZENER DIODES
Zener Voltage 3.3 to 200 Volts 3 Watt Power Dissipation
FEATURES
*
*
*
*
*
Glass passivated chip
Built-in strain relief
Low inductance
High peak reverse power dissipation
Low reverse leakage
* For use in stabilizing and clipping with high power rating
* ESD Rating of Class 3 (> 20 kV) per Human Body Model
* P/N suffix V means AEC-Q101 qualified, e.g:1SMB5913BV
* P/N suffix V means Halogen-free
SMB
0.086 (2.20)
0.071(1.80)
0.155 (3.94)
0.130 (3.30)
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
* Lead: Solderable per MIL-STD-750, method 2026
0.183 (4.65)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.081 (2.05)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Resistive or inductive load.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Ta = 25 )
Parameter
Power dissipation
@ T
L
= 75
Symbol
P
R
V
F
I
FSM
I
2
T
T
stg
,T
j
JL
Rating
3000
25
1.2
50
10.37
-55 to +150
Unit
mW
/W
V
A
A
2
S
Thermal Resistance, Junction to Lead
Maximum forward voltage at if=200mA
Peak Forward Surge Current 8.3 ms single half
sine-wave superimposed on rated load
(JEDEC method)
Typical Current Square Time
Storage temperature and Jumction temperature
2019-01/08
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